Photoionization cross-section and binding energy of donor impurities in GaAs, Ge and Si quantum wires with infinite barriers |
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Authors: | M Kksal E Kasapoglu H Sari I Skmen |
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Institution: | aCumhuriyet University, Physics Department, 58140 Sivas, Turkey;bDokuz Eylül University, Physics Department, 35160 Izmir, Turkey |
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Abstract: | Within the effective-mass approximation, we have investigated the binding energies of donor impurities as a function of the wire dimensions and the photoionization cross-section for a hydrogenic donor impurity placed on the center of the quantum well-wire as a function of the normalized photon energy in the GaAs, Ge and Si quantum wires with infinite barriers. The calculations are performed by the variational method based on a two-parametric trial wave function. The results show that the impurity binding energy and the photoionization cross-section depend strongly on both wire dimensions and material parameters. |
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Keywords: | Photoionization Quantum-well wires Donor impurity |
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