Encapsulation of atomic hydrogen into silsesquioxane cages and ESR of encapsulated hydrogen atoms |
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Authors: | Y Matsuda |
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Institution: | 1. Department of Chemistry, Graduate School of Sciences, Kyushu University, Hakozaki 6-10-1, Higashi Ku, 812-8581, Fukuoka, Japan
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Abstract: | Hydrogen atoms are encapsulated in octasilsesquioxane, R(SiO1.5)8, by irradiation with γ-rays at room temperature. In deca- and dodecasilsesquioxane, hydrogen atoms are encapsulated by irradiation at 77 K. The thermal decay of the encapsulated hydrogen is well described by a single-exponential function. The excitation energies of the decay are 110–117, 50.4, and 55.6 kJ/mol for the hydrogen atoms in Q8M8, Q10M10, and Q12M12, respectively. Theg-values and hyperfine splitting (hfs) constants of the hydrogen atoms in R(SiO1.5)8 are dependent on the substituents in the corners of the polyhedra, R. Theg-values are independent of the temperatures, while the hfs constants increase as the temperature decreases. Theg-values of the hydrogen atoms in a large encapsulating cavity decrease with increasing cavity size and approach 2.0023. The temperature dependence of the hfs constants for the hydrogen atoms in Q10M10 or Q12M12 suggests that the hydrogen atoms are localized within the encapsulating cages at low temperatures. |
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