Single InAs/InP quantum dot spectroscopy in 1.3–1.55 μm telecommunication band |
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| Authors: | Kazuya Takemoto Yoshiki Sakuma Shinichi Hirose Tatsuya Usuki Naoki Yokoyama Toshiyuki Miyazawa Motomu Takatsu Yasuhiko Arakawa |
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| Institution: | aFujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan;bNational Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan;cNanoelectronics Collaborative Research Center, University of Tokyo, 4-6-1 Komaba, Tokyo 153-8305, Japan;dIIS, University of Tokyo, 4-6-1 Komaba, Tokyo 153-8305, Japan;eRCAST, University of Tokyo, 4-6-1 Komaba, Tokyo 153-8305, Japan |
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| Abstract: | We present an optical spectroscopy and photon correlation measurement at telecommunication wavelengths performed on single InAs/InP quantum dots. Two main approaches brought high optical quality: an application of a ‘double-cap’ growth method to metalorganic chemical vapor deposition, and fabrication of a small mesa structure using low-damage wet chemical etching. Sharp and discrete exciton transition lines have been observed on the single quantum dots, which widely cover the spectral range of 1.3–1.55 μm. Using a pulsed excitation source and gated single-photon detection modules, we observed a photon antibunching behavior for an isolated exciton emission line, indicating nonclassical light emission near the wavelength of 1.3 μm. |
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| Keywords: | InAs/InP single quantum dots Double-cap growth Photon correlation Antibunching |
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