1.Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia ;2.Beruni State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Uzbekistan ;
Abstract:
The growth of manganese silicide films on silicon under the conditions of equilibrium and non-equilibrium diffusion doping of the silicon from the vapor phase is studied for different weight percent of the dopant.