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On the growth of higher manganese silicide films on silicon |
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| Authors: | A. S. Orekhov T. S. Kamilov A. G. Gaibov K. I. Vakhabov V. V. Klechkovskaya |
| Affiliation: | 1.Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia ;2.Beruni State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Uzbekistan ; |
| Abstract: | The growth of manganese silicide films on silicon under the conditions of equilibrium and non-equilibrium diffusion doping of the silicon from the vapor phase is studied for different weight percent of the dopant. |
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