Thermal annealing effects on grain boundary recombination activity in silicon

We have studied the influence of conventional and rapid thermal treatments at 850°C for 30 min and 10 s, respectively, on the recombination activity of the9,13 (P-type) and25 (N-type) grain boundaries in silicon. The analyses were made by scanning electron microscopy (SEM) working in the electron beam induced current mode (EBIC) and completed by minority carrier diffusion length measurements. The main result obtained from this study shows the importance of the rapid thermal process as a suitable thermal treatment for polycrystalline materials.