Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon (Phys. Status Solidi RRL 8/2017)期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon (Phys. Status Solidi RRL 8/2017)

Authors:	M. Vaqueiro‐Contreras V. P. Markevich M. P. Halsall A. R. Peaker P. Santos J. Coutinho S. Öberg L. I. Murin R. Falster J. Binns E. V. Monakhov B. G. Svensson

Affiliation:	1. Photon Science Institute, University of Manchester, Manchester M13 9PL, UK;2. Department of Physics and I3N, University of Aveiro, Campus Santiago, Aveiro 3810‐193, Portugal;3. Department of Engineering Sciences and Mathematics, Lule? University of Technology, SE‐97187 Lule?, Sweden;4. Materials Research Center of NAS of Belarus, Minsk 220072, Belarus;5. SunEdison Semiconductor Ltd., 28100 Novara, Italy;6. SunEdison Inc., Portland, Oregon, USA;7. Department of Physics, SMN, University of Oslo, Oslo N‐0316, Norway

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