Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer |
| |
| Authors: | Teys S. A. Talochkin A. B. Romanyuk K. N. Olshanetsky B. Z. |
| |
| Affiliation: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
| |
| Abstract: | Physics of the Solid State - The growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces is investigated by scanning tunneling microscopy (STM). It is shown that the... |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
