Investigation of interface and surface energy states in
semiconductors by PA method |
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Authors: | D M Todorović M Smiljanić V Jović M Sarajlić T Grozdić |
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Institution: | (1) Center for Multidisciplinary Studies, University of Belgrade, 11030 Belgrade, Serbia;(2) Institute for Chemistry, Technology and Metallurgy, 11001 Belgrade, Serbia |
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Abstract: | The photoacoustic (PA) signal should generally change with the
extent of damage, in the form of surface energy states (SES) or interface
energy states (IES). For a mechanically, chemically or particles processed
(Ar-plasma etching, ion implantation, etc) semiconductor surface, the
measured PA signal can be expect to increase as a consequence of the surface
(interface) optical, thermal and carrier transport properties changes. The
SES on Si wafer and IES in SiO2 film/Si substrate are investigated by
PA spectroscopy. The sub-bandgap PA spectra are used to obtain the
energy-dependent distribution of SES or IES. |
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Keywords: | |
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