Simulation of range profiles for boron implantation into SiO2/Si and Si3N4/SiO2/Si targets |
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| Authors: | M Posselt T Feudel G Thäter |
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| Institution: | (1) Central Institute for Nuclear Research, Academy of Sciences of the GDR, Rossendorf, PF 19, DDR-8051 Dresden, Germany;(2) Betrieb des Kombinates VEB Carl Zeiss Jena, VEB Forschungszentrum Mikroelektronik Dresden, Grenzstrasse 28, PF 34, DDR-8080 Dresden, Germany |
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| Abstract: | The simple method of profile combination is shown to be applicable to the simulation of boron profiles in SiO2/Si and Si3N4/Si layered targets. This is demonstrated by comparison with range distributions calculated by more sophisticated theoretical methods, i.e. TRIM Monte Carlo simulations and the algorithm of Christel et al., and with experimental data. The method of profile combination can also be applied to layered targets with a crystalline silicon substrate. |
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| Keywords: | 61 70 Tm 61 80 Mk 79 20 Nc |
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