GaAs／AlAs异质谷间转移电子器件微波振荡特性的研究

本文介绍了应用直接带隙ＧａＡｓ和间接带隙ＡｌＡｓ构成的量子阱产生异质谷间转移电子效应来制作新毫米波振荡器件一异质谷间转移电子器件，概述了器件的结构和基本的微波工作特性。器件已在８ｍｍ波段输出３２０ｍＷ连续波功率，最高振荡效率８％，脉冲工作时输出功率达２Ｗ，效率１０％，然后着重介绍该器件的振荡频率，输出功率随偏压的变化关系，突出它与常规耿氏器件之间的差异。最后简要描述器件计算机模拟中求出的器件内的电场结构和两能谷电流分布以及正反向偏压下器件交流工作中的电场结构，由此解释了实验中观察到的种种工作特性。从而深化了对异质谷间转移电子器件及其工作机理的研究。

Microwave Oscillation of GaAs/AlAs Heterostructure Intervalley Transferred Electron Devices

The heterostructure intervalley transferred electron devices produced by a band mixing quantum well composed of direct gap GaAs and indirect gap AlAs is introduced in this paper.The structure of this new millimeter wave oscillating diodes and its main oscillating behavior are described briefly.It can produce up to 320mW at 8mm wave band with the highest conversion efficiency of 8%.Under the pulse operation the largest output power of 2W with efficiency of 10% has been achieved.The function of oscillating frequency and output power versus bias voltage are emphasized.At last we briefly describe the electric field computed by a computer simulation program and the microwave operation model for forward and reverse- biased devices,from which the oscillating behavior mentioned above has been explained. The heterostructure intervalley transferred electron effect and its devices have been thoroughly analyzed through this work.