Structural and electrical characterization of MxNb3Se4 (M = Cu, H) |
| |
Authors: | R F Almukhametov R A Yakshibayev E V Gabitov I B Ableev |
| |
Institution: | (1) Department of Physics of Solid State, Bashkir State University, Ufa, Russia |
| |
Abstract: | The compounds CuxNb3Se4 (0≤x≤0,45) and HxNb3Se4 (0≤x≤2·10−3) were prepared by electrochemical titration from Nb3Se4. The samples were characterized by X-ray analysis and q-probe conductivity measurements as a function of temperature. The
Cu-compound is isostructural with Nb3Se4 for 0≤x≤0.2 and shows new phases for 0,2≤x≤0,45. The H-compound shows an impurity controlled conductivity in the temperature
range from 20 to 200 °C and an intrinsic type conductivity in the temperature range from 330 to 450 °C. The activation engines
are 0 and 0.15 eV, respectively. Rapid proton conduction in HxNb3Se4 makes it difficult to control the composition as demonstrated by exposure of the samples to different atmospheres. An increasing
H-concentration decreases drastically the conductivity by several orders of magnitude. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|