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Structural and electrical characterization of MxNb3Se4 (M = Cu, H)
Authors:R F Almukhametov  R A Yakshibayev  E V Gabitov  I B Ableev
Institution:(1) Department of Physics of Solid State, Bashkir State University, Ufa, Russia
Abstract:The compounds CuxNb3Se4 (0≤x≤0,45) and HxNb3Se4 (0≤x≤2·10−3) were prepared by electrochemical titration from Nb3Se4. The samples were characterized by X-ray analysis and q-probe conductivity measurements as a function of temperature. The Cu-compound is isostructural with Nb3Se4 for 0≤x≤0.2 and shows new phases for 0,2≤x≤0,45. The H-compound shows an impurity controlled conductivity in the temperature range from 20 to 200 °C and an intrinsic type conductivity in the temperature range from 330 to 450 °C. The activation engines are 0 and 0.15 eV, respectively. Rapid proton conduction in HxNb3Se4 makes it difficult to control the composition as demonstrated by exposure of the samples to different atmospheres. An increasing H-concentration decreases drastically the conductivity by several orders of magnitude.
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