Surface diffusion of Pb on clean Si surfaces |
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Authors: | Andrey E Dolbak Ruslan A Zhachuk Boris Z Olshanetsky |
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Institution: | (1) Institute of Semiconductor Physics, Russian Academy of Sciences, Prospekt Lavrentyeva 13, 630090 Novosibirsk, Russia |
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Abstract: | Pb diffusion on clean Si(111), (100), and (110) surfaces was studied by Auger electron spectroscopy and low energy electron
diffraction in the temperature range from 100 to 300°C. It is shown that lead transport along sillicon surfaces takes place
via the mechanism of solid-phase spreading with a sharp moving boundary. The temperature dependence of the Pb diffusion coefficients
on Si(111), (100) and (110) surfaces have been obtained. A Si(110)-4×2-Pb surface structure has been observed for the first
time. |
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Keywords: | Surface Silicon Lead Surface structure Surface diffusion Low energy electron diffraction Auger electron spectroscopy |
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