Weak localization and fluctuation electron-electron interaction in disordered indium films |
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Authors: | B. I. Belevtsev Yu. F. Komnik A. V. Fomin |
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Affiliation: | (1) Institute for Low Temperature Physics and Engineering, UkrSSR Academy of Sciences, 47, Lenin Avenue, SU-310164 Kharkov, USSR |
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Abstract: | The effects of perpendicular magnetic fieldsH on the temperature dependence of the resistanceR(T) (T<20 K), the superconducting transition temperatureTc and the fluctuation superconductivity (T«Tc) have been investigated on high-resistance (R>1 kOhm) indium films prepared by simultaneous condensation of the metal and hydrogen onto a substrate cooled to 5 K. AtT«Tc the resistance slightly decreased with rising temperature, in agreement with the weak localization and electron-electron interaction (EEI) theories. Processing of theR(T, H) curves in terms of the theories permitted the electron phase relaxation time (T) to be determined and the time so of electron spin relaxation due to spin-orbital interaction (SOI) to be estimated. In the temperature rangeT–Tc/k the effect of the fluctuation EEI on conductivity was investigated. The contribution of the fluctuation EEI is shown to be given by a sum of two corrections: the Cooper and the Maki-Thompson ones. In the rangeT–Tc/k the influence of magnetic field was investigated on the transition from two-to zerodimensional fluctuations of the order parameter resulting from temperature increase in the rangeT>Tc. Increasing field was found to cause enlargement of the zero-dimensional fluctuation critical region and lowering of the fluctuation dimensionality alteration temperature, leading eventually to complete two-dimensional fluctuation suppression. The experimental dependencesTc(H) experienced, in addition to orbital effects of the magnetic field, depairing effect of the field on electron spins. Thus the so magnitude could also be estimated and proved roughly equal to so determined from the analysis ofR(T, H) |
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