| γ-LiAlO2衬底上生长GaN的研究进展 |
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| 引用本文： | 黄涛华,邹军,周健华,王军,张连翰,周圣明.γ-LiAlO2衬底上生长GaN的研究进展[J].激光与光电子学进展,2006,43(12):36-41. |
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| 作者姓名： | 黄涛华 邹军 周健华 王军 张连翰 周圣明 |
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| 作者单位： | 1. 中国科学院上海光学精密机械研究所,上海,201800;中国科学院研究生院,北京,100039
2. 中国科学院上海光学精密机械研究所,上海,201800 |
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| 基金项目： | 上海市浦江计划资助项目;中国科学院"百人计划" |
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| 摘 要： | γ-LiAlO2与GaN的品格失配很小，易于分离，在其（100）面上能生长出无极性的GaN，是一种很有希望的GaN衬底材料。结合γ-LiAlO2的基本性质，详细介绍了γ-LiAlO2衬底上用各种方法生长GaN的研究进展。
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| 关 键 词： | GaN薄膜 γ-LiAlO2 非极性发光二极管 |
| 收稿时间： | 2006-05-29 |
| 修稿时间： | 2006-05-29 |
Developments of GaN Grown on γ- LiAlO2 Substrate |
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| HUANG Taohua,ZOU Jun,ZHOU Jianhua,WANG Jun,ZHANG Lianhan,ZHOU Shengmin.Developments of GaN Grown on γ- LiAlO2 Substrate[J].Laser & Optoelectronics Progress,2006,43(12):36-41. |
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| Authors: | HUANG Taohua ZOU Jun ZHOU Jianhua WANG Jun ZHANG Lianhan ZHOU Shengmin |
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| Institution: | 1 Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences, Shanghai 201800; 2 Graduate School of Chinese Academy of Sciences, Belting 100039 |
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| Abstract: | g-LiAlO2, as a very promising substrate, shows small lattice mismatch with GaN and can separate from GaN easily. Most importantly, nonpolar M-plane GaN can be grown on g-LiAlO2(100) plane. Combined with basic properties of g-LiAlO2, the research developments of GaN grown on g-LiAlO2 substrate by different methods are reviewed in detail. |
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| Keywords: | GaN film g- LiAlO2 nonpolar LED |
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