High repetition rate passive Q-switching of diode-pumped Nd:GdVO4 laser at 912 nm with V3+:YAG as the saturable absorber |
| |
| Authors: | H. W. Yang H. T. Huang J. L. He S. D. Liu F. Q. Liu X. Q. Yang J. L. Xu J. F. Yang B. T. Zhang |
| |
| Affiliation: | 1.College of Physics and Electronics,Shandong Normal University,Ji’nan,China;2.State Key Laboratory of Crystal Materials, Institute of Crystal Materials,Shandong University,Ji’nan,China |
| |
| Abstract: | The character of a diode-pumped passively Q-switched Nd:GdVO4/V3+:YAG 912 nm laser was demonstrated for the first time to our knowledge. With an absorbed pump power of 7.4 W, an average output power of 360 mW with a Q-switched pulse width of 328 ns at a pulse repetition rate of 163 kHz was obtained. The Q-switching efficiency was found to be 32.7%. Our work further indicated V3+:YAG could be an effective fast passive Q-switch for 0.9 μm radiation. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
