X-ray microanalysis of quaternary semiconductor solid solutions and its application to the (SnTe-SnSe):In system |
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| Authors: | V A Moshnikov A V Moshnikov A I Rumyantseva S A Nemov R V Parfen’ev A V Chernyaev |
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| Institution: | (1) St. Petersburg State Electrical Engineering University, 197376 St. Petersburg, Russia;(2) St. Petersburg State Technical University, 195251 St. Petersburg, Russia;(3) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | A reliable technique of local chemical characterization of multicomponent semiconductor solid solutions has been developed,
and the possibility of its application to the SnTe-SnSe quaternary solid solutions doped with 16 at.% In verified. The behavior
of the electrical resistivity of samples of these solid solutions at low temperatures, 0.4–4.2 K, has been studied. The critical
temperature T
c and the second critical magnetic field H
c2 of the superconducting transition and their dependences on the solid-solution composition have been determined. The superconducting
transition at T
c≈2–3 K is due to hole filling of the In-impurity resonance states, and the observed variation of the superconducting transition
parameters with increasing Se content in the solid solution is related to the extrema in the valence band and the In band
of resonance states shifting with respect to one another.
Fiz. Tverd. Tela (St. Petersburg) 41, 612–617 (April 1999) |
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