Prevention of nanoparticle coalescence under high-temperature annealing |
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Authors: | Mizuno Mikihisa Sasaki Yuichi Yu Andrew C C Inoue Makoto |
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Affiliation: | Sony Corporation, Sendai Technology Center, 3-4-1 Sakuragi, Tagajo, Miyagi 985-0842, Japan. Mikihisa.Mizuno@jp.sony.com |
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Abstract: | An effective method of employing 3-aminopropyldimethylethoxysilane linker molecules to stabilize 4.4 nm FePt nanoparticle monolayer films on a SiO2 substrate as well as to prevent coalescence of the particles under 800 degrees C annealing is reported. As-deposited FePt nanoparticle films in chemically disordered face-centered-cubic phase transform to mostly chemically ordered L1 0 structure after annealing, while the nanoparticles are free from serious coalescence. The method may fulfill the pressing need to prevent nanoparticle coalescence under high-temperature annealing for the development of FePt nanoparticle based products, such as ultrahigh-density magnetic recording media and novel memory devices. |
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