不同主体材料对红色磷光OLED器件性能的影响

制作了结构为ITO/2T-NATA (20 nm)/NPB(60 nm)/Zn(BTZ)₂ : Ir(DBQ)₂(acac) (80 nm)/Alq₃(70 nm)/LiF(1 nm)/Al(200 nm)的红光器件,其中2T-NATA是4,4',4″-tris(N-(2-naphthyl)-N-phenyl-amino)-triphenylamine,NPB是N,N'-di(naphthalen-1-yl)-N,N'-diphenyl-benzidine, Zn(BTZ)₂是Bis-(2-(2-hydroxyphenyl) benzothiazole)zinc,Ir(DBQ)₂(acac)是iridium complex,Alq₃ 是tris(8-hydroxyquinolato)aluminum。基于Ir(DBQ)₂(acac) 掺杂的Zn(BTZ)₂体系的器件给出最高电致发光(EL)性能。结果显示:10％Ir(DBQ)₂-(acac) 掺杂Zn(BTZ)₂器件的亮度和效率分别为25 000 cd/m²和12 cd/A,其相应的EL峰位于620 nm,色坐标(x=0.63,y=0.37)。由于未使用激子阻挡层,所以,比通常磷光器件的制作工艺简单并且操作过程容易控制。

Effect of A Series of Host Material on Optoelectronic Performance of Red Phosphorescent OLED

Full color display is the goal of organic light-emitting diodes (OLED), but the fabrication of stable red devices is the great barrier in the mass production of OLED.In order to use organic light-emitting diodes in displays,it is very important to obtain red light emitting with high efficiency.In this paper, a red phosphorescent material is doped into different host materials by a structure of ITO /CuPc(20 nm)/NPB(60 nm)/Zn(BTZ)2 : Ir(DBQ)2(acac) (80 nm)/Alq3(70 nm)/LiF(1 nm)/Al (200 nm).It was found that the device can achieve a brightness of 25 000 cd/m2, a current efficiency of 12 cd/A and the colour coordinates of (x=0.63,y=0.37). Because there is no hole blocking layer, the device producing process would be simple.