Optical characterization of doped and undoped GaAs at 300 K |
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| Affiliation: | 1. Physics Department University of Port Elizabeth P.O. Box 1600, Port Elizabeth 6000, South Africa;2. Computer Centre, University of Port Elizabeth P.O. Box 1600, Port Elizabeth 6000, South Africa;1. School of Physics, Damghan University, P.O. Box 36716-41167, Damghan, Iran;2. School of Physics, Institute for Research in Fundamental Sciences (IPM), 19395 5531, Tehran, Iran;1. Department of Electronics and Communication Engineering, National Institute of Technology Calicut, Kozhikode, India;2. Department of Electronics and Communication Engineering, Bennett University, Greater Noida, India;1. Nanomaterials Technology Unit, Basic and Applied Scientific Research Center (BASRC), College of Science of Dammam, Imam Abdulrahman Bin Faisal University, P. O. Box 1982, 31441 Dammam, Saudi Arabia;2. Department of Physics, College of Sciences for Girls, Imam Abdulrahman Bin Faisal University, Saudi Arabia |
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| Abstract: | Infrared reflectance spectroscopy was employed for the optical characterization of undoped GaAs, as well as for GaAs doped with Si, Zn and Cr. Dielectric constants, refractive indices and extinction coefficients were determined using the classical two oscillator model. |
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