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High-temperature ferromagnetism in Zn1−xMnxO semiconductor thin films |
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| Authors: | Nikoleta Theodoropoulou Vinith Misra John Philip Patrick LeClair Geetha P Berera Jagadeesh S Moodera Biswarup Satpati Tapobrata Som |
| Institution: | aFrancis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, MA 02139, USA bInstitute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India |
| Abstract: | Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in Zn1−xMnxO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8 μB/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin-polarized and participate in the observed ferromagnetic behavior. |
| Keywords: | Spintronics Magnetic semiconductors |
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