Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers

Processes undergoing in Sc/Si multilayer X-ray mirrors (MXMs) with periods of ∼27 nm and barrier layers of CrB₂0.3- and 0.7-nm thick within the temperature range of 420–780 K were studied by methods of small-angle X-ray reflectivity (λ=0.154 nm) and cross-sectional transmission electron microscopy. All layers with the exception of Sc ones are amorphous. Barrier layers are stable at least up to a temperature of 625 K and double the activation energy of diffusional intermixing at moderate temperatures. Introduction of barriers improves the thermal stability of Sc/Si MXMs at least by 80 degrees. Diffusion of Si atoms through barrier layers into Sc layers with formation of silicides was shown to be the main degradation mechanism of MXMs. A comparison of the stability for Sc/Si MXMs with different barriers published in the literature is conducted. The ways of further improvement of barrier properties are discussed.