Determination of minority carrier diffusion coefficient from capacitance-voltage characteristics of Au/Ge-Schottky barriers

We developed a method for the determination of the minority carrier diffusion coefficient by means of the capacitance-voltage characteristics of a Schottky barrier. Capacitance-voltage-frequency characteristics were measured at room temperature and liquid nitrogen temperature. We adapted the diffusion capacitance concept ofp-n junction for the metal/semiconductor rectifier contact. We determined the minority carrier diffusion coefficient as 47–61 cm²/s.