| Ga3+:KTP晶体c向电导率的研究 |
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| 引用本文： | 臧和贵,常新安,张书峰,陈学安,肖卫强.Ga3+:KTP晶体c向电导率的研究[J].人工晶体学报,2006,35(2):378-380. |
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| 作者姓名： | 臧和贵 常新安 张书峰 陈学安 肖卫强 |
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| 作者单位： | 北京工业大学材料科学与工程学院,北京,100022 |
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| 摘 要： | 采用ICP-AES法测定了Ga3+:KTP晶体中掺质Ga3+离子含量,并由此得出Ga3+离子在相应晶体生长体系中的平均分配系数为0.0373;采用静电计和多频测试仪测定并计算出Ga3+:KTP晶体c向的电导率,将其与纯KTP晶体者进行比较.结果发现,Ga3+:KTP晶体c向电导率比纯KTP晶体c向电导率在交流情况下最大降低了两个数量级以上.文中对晶体c向电导率的降低机理进行了探讨.
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| 关 键 词： | Ga3+:KTP晶体 分配系数 c向电导率 |
| 文章编号： | 1000-985X（2006）02-0378-03 |
| 收稿时间： | 10 18 2005 12:00AM |
| 修稿时间： | 2005-10-18 |
Study on Conductivity along c Axis of Ga3+:KTP Crystal |
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| ZANG He-gui,CHANG Xin-an,ZHANG Shu-feng,CHENG Xue-an,XIAO Wei-qiang.Study on Conductivity along c Axis of Ga3+:KTP Crystal[J].Journal of Synthetic Crystals,2006,35(2):378-380. |
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| Authors: | ZANG He-gui CHANG Xin-an ZHANG Shu-feng CHENG Xue-an XIAO Wei-qiang |
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| Institution: | College of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China |
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| Abstract: | The content of dopant Ga~(3 ) ion in Ga~(3 ):KTP crystal was measured by ICP-AES method,and the average distribution coefficient in the growth system of Ga~(3 ) was obtained(0.0373).The conductivity along c axis of Ga~(3 ):KTP crystal was measured by electrometer and multifrequency measurer,and compared with that of the pure KTP crystal.The result shows that the conductivity along c axis of Ga~(3 ):KTP crystal was decreased by more two orders of magnitude vs.that of the pure KTP.The mechanism is discussed in this article. |
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| Keywords: | Ga~(3 ):KTP crystal distribution coefficient c axis conductivity |
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