Donors in a strong magnetic field and elastic magnetic-impurity resonance in diamondlike semiconductors

The possibility of resonance during elastic intravalley scattering in n-type semiconductors is investigated in connection with the crossing (due to anisotropy of the effective mass) of the energy levels of excited states of a shallow donor as functions of the magnetic field. The hybridization of states of different frequencies in the vicinity of a crossing is attributed to the emergence of a nonzero dipole moment of the excited impurity atom and, accordingly, a long-range potential, which creates carrier-transport anomalies. The lower part of the donor spectrum is calculated as a function of the magnetic field in Si with B∥〈001〉 and in Ge with B∥〈111〉 or B∥〈110〉. A crossing occurs in Ge in the field range 9.9 T<B<16.7 T and in Si in the field range 10.5 T<B<37.7 T. The characteristic longitudinal relaxation time and the transverse conductivity, which are determined by scattering at excited donors in the presence of the hybridization of states, are calculated. Zh. éksp. Teor. Fiz. 112, 975–1010 (September 1997)