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Fundamentals and advantages of ultrafast micro-structuring of transparent materials
Authors:D Ashkenasi  G Müller  A Rosenfeld  R Stoian  IV Hertel  NM Bulgakova  EEB Campbell
Institution:1.Laser- und Medizin-Technologie GmbH, Schwarzschildstr. 8, 12489 Berlin, Germany,DE;2.Max Born Institut, Max-Born-Str. 2a, 12489, Germany,DE;3.Institut of Thermophysics SB RAS, Novosibirsk, Russia,RU;4.G?teborg University and Chalmers University of Technology, G?teborg, Sweden,SE
Abstract:Experimental investigations using femtosecond and picosecond laser pulses at 800 nm illuminate the distinctions between the dynamics and nature of ultrafast processing of dielectrics compared with semiconductors and metals. Dielectric materials are strongly charged at the surface on the sub-ps time scale and undergo an impulsive Coulomb explosion prior to thermal ablation. Provided the laser pulse width remains in the ps or sub-ps time domain, this effect can be exploited for processing. In the case of thermal ablation alone, the high localization of energy accompanied by ultrafast laser micro-structuring is of great advantage also for high quality processing of thin metallic or semiconducting layers, in which the surface charge is effectively quenched. Received: 17 January 2003 / Accepted: 8 February 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +49-30/670-53-500, E-mail: d.ashkenasi@lmtb.dt RID="**" ID="**"Present address: LMTB GmbH, Berlin, Fabeckstr. 60–62, D-14195 Berlin, Germany
Keywords:PACS: 79  20  Ds
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