A stochastic modeling of morphology formation by optical near-field processes |
| |
Authors: | M Naruse T Kawazoe T Yatsui N Tate M Ohtsu |
| |
Institution: | (1) Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku Tokyo, 113-8656, Japan;(2) Nanophotonics Research Center, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku Tokyo, 113-8656, Japan |
| |
Abstract: | We previously reported (S. Yukutake et al. in Appl. Phys. B 99:415, 2010) that by depositing Ag particles on the electrode of a photovoltaic device composed of poly(3-hexylthiophene) (P3HT) and
ZnO under light illumination (wavelength λ=660 nm) while reversely biasing the P3HT/ZnO p–n junction, a unique granular Ag film was formed. The resultant device generated
a photocurrent at wavelengths as long as 670 nm, which is longer than the long-wavelength cutoff λ
c (=570 nm) of P3HT. Such an effect originates from a phonon-assisted process induced by an optical near field. In this paper,
we analyze the morphological character of the Ag clusters and build a stochastic model in order to understand the principles
behind the self-organized pattern formation process. The modeling includes the geometrical character of the material, its
associated optical near fields, and the materials that flow in and out of the system. The model demonstrates behavior consistent
with that observed in the experiment. We can see these phenomena as a new kind of self-organized criticality taking account
of near-field effects, which will provide an insight into the analysis and design of future nanophotonic devices. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|