GaAs样品对太赫兹微带线频谱特性的影响

太赫兹片上系统是近年来太赫兹研究的热点，是太赫兹系统集成的关键技术。太赫兹微带线（MSL）是太赫兹片上系统的关键，微带线设计的合理性，直接影响着太赫兹片上系统的灵敏度和准确度，为了更好地制作片上系统，以理论模型为参照，利用HFSS（High Frequency Structure Simulator）软件对太赫兹传输线及带阻滤波结构进行了系统的仿真研究。首先研究了微带线结构、微带带阻滤波结构的传输特性，并从应用的角度首次将样品引入仿真模型，研究了以GaAs为例的介电样品对微带滤波结构的滤波特性的影响。设计了358 GHz的微带滤波器结构，并通过改变放置在其上的GaAs样品参数，发现样品对微带滤波结构的中心滤波频率有明显影响。为太赫兹微带线的设计制作提供了精确的理论数据。

Influence of GaAs on spectrum characteristic of terahertz microstrip

Terahertz(THz) Microstrip Line(MSL) is the key to THz system on chip. The rationality of the design of THz MSL affects the sensitivity and accuracy of THz on-chip system directly. To make the on-chip system better, the THz MSL and the MSL band stop filter were simulated by using the software HFSS(High Frequency Structure Simulator) by reference the theoretical model. The transmission characteristics of THz MSL and the MSL band stop filter were researched by simulation. From the point of view of application, the sample, such as GaAs, was introduced into the simulation model to research the effect of GaAs sample on the filter characteristic of band stop filter for first time. Finally, a 358 GHz MSL band stop filter was designed, and the effect of GaAs sample on the center frequency of band stop filter was discovered by changing the size of the GaAs sample putting on the band stop filter. The results of this paper provide accurate theoretical data for the design and fabrication of THz MSL.