SiOx films prepared using RF magnetron sputtering with a SiO target |
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| Authors: | H Miyazaki T Goto |
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| Institution: | a Department of Material Science, Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060, Nishikawatsu-cho, Matsue, Shimane 690-8504, Japan
b Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan |
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| Abstract: | In this study, SiOx thin films were prepared using reactive radio frequency magnetron sputtering at room temperature with a SiO sintered target. The obtained SiOx films were identified using X-ray diffraction, transmission electron microscopy, infrared absorption spectroscopy, X-ray photoelectron spectroscopy and ultraviolet-visible transmittance measurement. The x in SiOx film was controlled from 0.98 to 1.70 by changing the oxygen flow ratio at deposition. Increasing the oxygen flow ratio increased the optical gap of the SiOx films from 3.7 to greater than 6 eV. |
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| Keywords: | 42 79 Wc 52 40 Hf 81 15 cd |
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