X-ray topography characterization of the structural response of Ge(Ga) crystals to variation in gravity force vector orientation during crystallization

The influence of crystallization process disturbances connected with the variation of the crystallization front orientation relative to the gravity force vector (characteristic for crystal growth under conditions of microgravity onboard space vehicles) on the real crystal structure has been investigated by plane-wave X-ray topography. It has been found that these disturbances can result in a local disorder in the impurity distribution in the form of microsegregation growth striations. Quantitative estimations of the amplitude for the composition variation based on the analysis of contrast in growth striation images obtained by the method of plane-wave X-ray topography have been carried out.