Specific Features of Determining the Electrophysical Parameters of Variband CMT Structures Grown by Molecular-Beam Epitaxy

The effects of wide- and narrow- variband layers on the charge-carrier concentration and mobility in the MBE-grown epitaxial CMT structures measured by the Hall-effect method are studied by numerical simulation. The dependence of the relative difference between the experimentally obtained effective values of electrophysical parameters and those of an epitaxial coating on the variband-layer characteristics is discussed. An analysis of this dependence shows that the manner in which the broad-band and narrow-band layers affect the resulting parameters is inequivalent. The calculations suggest that the effect of the wide-band layer on the experimental electrophysical parameters can be neglected. In the case of the narrow variband layer, however, the difference between the electophysical parameters strongly depends on the variband-layer parameters and the concentrations of ionized donor and acceptor centers.