往复式电镀金刚石线锯切割单晶硅片特性研究

通过往复式电镀金刚石线锯切割单晶硅片实验,分析了切片表面的微观形貌特点,研究了锯丝速度与进给速度对硅片的表面粗糙度、总厚度偏差(TTV)、翘曲度与亚表面损伤层厚度(SSD)的影响规律.结果表明:线锯锯切时材料以脆性模式去除,锯切表面的微观形貌呈现部分沟槽与断续划痕,并存在大量凹坑;锯丝速度增大,进给速度减小,表面粗糙度与SSD减小;锯丝速度增大,进给速度增大,硅片的翘曲度也随之增大;硅片TTV值与锯丝速度和进给速度的匹配关系相关.

Study on the Machining Performance of Single Crystal Silicon Wafer Cut by Using Reciprocating Electroplated Diamond Wire Saw

Wire saw speed and ingot feed speed have significant effects on the wire saw machining process. Based on reciprocating electroplated diamond wire saw slicing monocrystalline silicon wafers experiments, the silicon wafer surface topography was analyzed, and the influences of wire saw speed and feed speed on wafers surface roughness, total thickness variation (TTV), warpage and subsurface damage layer thickness (SSD) were studied. The results indicate that the materials removal is in a brittle regime in wires...