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Bridgman growth of Bi4Si3O12 scintillation crystals and doped effects on radiation resistance |
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| Authors: | Fei Yiting Fan Shiji Sun Renying Xu Jiayue M. Ishii |
| Affiliation: | a Shanghai Institute of Ceramics, Chinese Acadenty of Sciences, Shanghai 200050, P.R., China b Shonan Institute of Technology, Fujisawa 251, Japan |
| Abstract: | Ce, Nd and Eu doped BSO crystals 20×20× 100mm3 in size have been gown by vertical Bridgman method, and the doped effects on radiation resistance of BSO have also been studied for the first time. Nd and Eu dopns were found to improve the radiation resistance of BSO. However, Cc and Nd dopings degrade the light output of BSO except that Eu doping has almost no effect on it. Therefore, Eu may be the most promising dopant candidate for improving the scintillation properties of BSO crystal. |
| Keywords: | Doped BSO crystals Bridgman growth Light output Radiation resistance |
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