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Photoelectric Characteristic of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p-n Heterojunctions
引用本文:黄延红 金奎娟 赵昆 吕惠宾 何萌 陈正豪 周岳亮 杨国桢 马秀良. Photoelectric Characteristic of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p-n Heterojunctions[J]. 中国物理快报, 2006, 23(4): 982-985
作者姓名:黄延红 金奎娟 赵昆 吕惠宾 何萌 陈正豪 周岳亮 杨国桢 马秀良
基金项目:Project Supported by the National Natural Science Foundation of China (Grant No 10334070) and by the National Key Basic Research & Development Programme of China (Grant No 2004CB619004).
摘    要:

关 键 词:光电特性 p-n异质结 飞秒光电效应 半导体物理
收稿时间:2005-12-28
修稿时间:2005-12-28

Photoelectric Characteristic of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p-n Heterojunctions
Abstract:Good rectifying current-voltage characteristics and nanosecond photoelectric effects are observed in the p-n hereto junctions of La0.9Sr0.1 MnO3/SrNb0.01 Ti0.99O3 fabricated by laser molecular beam epitaxy. The rise time is about 26ns and the full width at half maximum is about 125ns for the open-circuit, photovoltaic pulses when the La0.9Sr0.1MnO3 film in the heterojunction is irradiated by a laser operated at wavelength 308nm with pulse duration of about 25 ns. A qualitative explanation is presented, based on an analysis of the photoelectric effect of p-n hereto junction.
Keywords:
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