|
|||||
|
|
Pressure dependence of the optical-absorption edge of AlN and graphite-type BN |
|
| Authors: | Hisamitsu Akamaru Akifumi Onodera Tadashi EndoOsamu Mishima |
| Institution: | a Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan b Graduate School of Engineering, Tohoku University, Aoba, Sendai 980-8579, Japan c National Institute for Research in Inorganic Materials, Tsukuba 305-0044, Japan |
| Abstract: | Effect of pressure on the band gaps on AlN and graphite-type BN (g-BN) has been studied up to 2.7 GPa at room temperature by measuring the optical-absorption edge of single crystals of each substance pressurized in a sapphire-anvil cell. The direct band gap of AlN shifted towards higher energy at a rate of 49±1 meV/GPa, whereas in g-BN the pressure dependence of the band gap was −36±1 meV/GPa. The results are compared with existing first-principles calculations. |
| Keywords: | A Inorganic compounds C High pressure D Optical properties |
| 本文献已被 ScienceDirect 等数据库收录！ | |