A new high-pressure phase of ZnSe with B9-type structure |
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Authors: | Keiji Kusaba Takumi Kikegawa |
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Affiliation: | a Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan b Institute for Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba 305-0801, Japan |
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Abstract: | High-pressure and high-temperature behavior of ZnSe was investigated by energy dispersive X-ray diffraction method up to 14 GPa and 800°C. A new high-pressure phase with B9 (HgS)-type structure is found near the B3-B1 phase boundary at room temperature, as predicted by an ab-initio calculation. The property and observed pressure region of the B9-type phase are in good agreement with the ab-initio calculation. At high-temperature condition above 300°C, only the direct transitions are observed between the B3 and B1 phases. The B3-B1 phase boundary is also determined to be P (GPa)=12.21−0.0039T (°C) for the temperature range between 300 and 800°C. |
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Keywords: | A. Semiconductors C. High pressure C. X-ray diffraction D. Crystal structure D. Phase transitions |
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