GaAs单片二极管双平衡混频器

采用0.25μm的GaAs工艺制作了一款单片二极管双平衡混频器。基于环形二极管双平衡混频器的基本工作原理,提出了LO巴伦与RF巴伦的区别所在,并以Marchand巴伦为LO巴伦,以triformer巴伦作为RF巴伦。在优化了局部电路后,再与环形二极管组成整体电路,并对整体电路进行了优化。最后对版图进行EM仿真,并稍作调整以改善EM仿真结果。当本振功率在13dBm时,实测得转换损耗在低本振和高本振下约为11.5dB和10.5dB,LO端口到IF端口和RF端口隔离度分别为30dB和35dB,LO端口和RF端口驻波分别小于2和3.5,实测结果与仿真结果基本一致。

A GaAs Monolithic Diode Double-balanced Mixer

A ring form double-balanced mixer （DBM） is designed by using 0.25 μm GaAs process. Based on the characteristic of ring-diode DBM, the difference between RF balun and LO balun is proposed and then the two baluns are constructed by using Marchand balun and triformer balun respectively. The whole circuit is formed and optimized after the optimization of the two baluns over the bandwith. Finally the layout is made and simulated by EM tools. Some adjustment is executed on the layout to improve the performances. The measured conversion losses are about 11.5dB and 10.5dB under low and high LO frequency respectively with the LO power=13dbm. The isolation of LO port to IF port and LO port to RF port are better than 30dB and 35dB. The VSWR at LO port and RF port are less than 2 and 3.5. It shows that the measured results agree with the simulations pretty well.