| 硅单晶中片状沉淀物X射线形貌研究 |
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| 引用本文： | 储晞,麦振洪,戴道扬,崔树范,葛培文.硅单晶中片状沉淀物X射线形貌研究[J].物理学报,1987,36(3):408-410. |
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| 作者姓名： | 储晞 麦振洪 戴道扬 崔树范 葛培文 |
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| 作者单位： | 中国科学院物理研究所 |
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| 摘 要： | 本文利用X射线截面形貌术、限区形貌术、回摆形貌术以及扫描电子显微镜等方法研究了硅单晶中一个片状沉淀物,确定其组态及在晶体内的位置,并对其形成作了简略的分析。
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| 收稿时间： | 5/7/1986 12:00:00 AM |
STUDY ON A PLANE-LIKE PRECIPITATE IN SILICON SINGLE CRYSTAL BY X-RAY TOPOGRAPHIC METHOD |
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| CHU XI,MAI ZHEN-HONG,DAI DAO-YANG,CUI SHU-FAN and GE PEI-WEN.STUDY ON A PLANE-LIKE PRECIPITATE IN SILICON SINGLE CRYSTAL BY X-RAY TOPOGRAPHIC METHOD[J].Acta Physica Sinica,1987,36(3):408-410. |
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| Authors: | CHU XI MAI ZHEN-HONG DAI DAO-YANG CUI SHU-FAN and GE PEI-WEN |
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| Abstract: | A plan-like precipitate in silicon single crystal was investigated by means of X-ray section topography. limited topography, dilatation topography and SEM. The configuration and position of the defect in matrix were determined. And a breief analysis about its formation is also presented. |
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