| Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy |
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| 作者姓名： | 吴兵鹏 吴东海 倪海桥 黄社松 詹峰 熊永华 徐应强 牛智川 |
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| 作者单位： | State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 60607016 and 60625405, and the National Basic Research Programme of China. |
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| 摘 要： | We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.
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| 关 键 词： | 分子束 外延 变形 优化 量子理论 |
| 收稿时间： | 2007-07-19 |
Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy |
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| WU Bing-Peng,WU Dong-Hai,NI Hai-Qiao,HUANG She-Song,ZHAN Feng,XIONG Yong-Hua,XU Ying-Qiang,NIU Zhi-Chuan.Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy[J].Chinese Physics Letters,2007,24(12):3543-3546. |
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| Authors: | WU Bing-Peng WU Dong-Hai NI Hai-Qiao HUANG She-Song ZHAN Feng XIONG Yong-Hua XU Ying-Qiang NIU Zhi-Chuan |
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| Institution: | State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Abstract: | We investigate the molecular beam epitaxy growth of metamorphic InxGa1-xAs materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. The optimized structures have an average surface roughness of 0.9--1.8nm. It is also proven by PL measurements that the optical properties of high indium content (55%) InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions. |
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| Keywords: | 78 55 Cr 68 65 Fg 68 65 Hb 81 15 Hi |
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