Novel methods of TXRF analysis for silicon wafer surface inspection |
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Authors: | L Fabry Siegfried Pahlke Ludwig Kotz Peter Wobrauschek and Christina Streli |
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Institution: | (1) Wacker Siltronic AG, Johannes-Hess-Strasse 24, D-84479 Burghausen, Germany, DE;(2) Atominstitut Wien, A-1020 Vienna, Austria, AT |
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Abstract: | TXRF became a standard, on-line inspection tool for controlling the cleanliness of polished Si wafers for semiconductor use.
Wafer makers strive for an all-over metallic cleanliness of < 1010 atoms · cm–2. The all-over cleanliness can be analyzed using VPD/TXRF. For VPD preparation and scanning we have developed an automatic
system coupled with TXRF. With synchrotron radiation TXRF we were able to detect 13 fg of Ni in a residual microdroplet, i.e.105 atoms · cm–2.
Received: 8 January 1998 / Revised: 13 July 1998 / Accepted: 30 July 1998 |
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