首页 | 本学科首页   官方微博 | 高级检索  
     


Optoelectrical investigations on MOS-sandwiches at low temperatures
Authors:Klaus Reimann and Dietrich Onnasch
Affiliation:(1) Department of Physics and Astronomy, The University of Nebraska, 116 Brace Laboratory, 68588-0111 Lincoln, NE, USA
Abstract:MOS-structures are irradiated with light of energy from 1.5 to 6 eV at different temperatures (300, 77, 12 K) while the resulting photocurrent is measured. At high photon energies (hv>4 eV) the threshold energy and the scattering mean free path for electrons at the Si — SiO2-interface are determined. They are independent from temperature. At low photon energies (hv<3 ev)=" electrons=" are=" released=" from=" traps=" with=" energy=" levels=" 1.2=" and=" 1.9=" ev=" below=" the=" si-conduction=" band.=" the=" trap=" concentration=" is=" 4.8=">sdot 1013 cm–3. The capture cross section is measured in a rather direct way. The temperature and electrical field dependence of this cross section is explained by a trapping model.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号