Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl |
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Authors: | M Weso?owski W Strupiński M Motyka G S?k E Dumiszewska P Caban A Jasik A Wójcik K Pier?ciński D Pier?cińska |
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Institution: | Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan |
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Abstract: | The antimonide laser heterostructures growth technology using MBE epitaxy is currently well-developed, while MOVPE method
is still being improved. It is known that the principal problem for MOVPE is the oxygen and carbon contamination of aluminium
containing waveguides and claddings. The solution would be to apply a proper aluminium precursor. In this study we present
the results of metal-organic epitaxy of In- and Al-containing layers and quantum well structures composing antimonide lasers
devices. Special emphasis was put on the aluminium precursor and its relation to AlGaSb and AlGaAsSb materials properties.
The crystalline quality of the layers grown with two different Al precursors was compared, very good structural quality films
were obtained. The results suggested a substantial influence of precursors pre-reactions on the epitaxial process. The oxygen
contamination was measured by SIMS, which confirmed its dependence on the precursor choice. We also optimised the GaSb substrate
thermal treatment to deposit high quality GaSb homoepitaxial layers. Quaternary InGaAsSb layers were obtained even within
the predicted miscibility gap, when arsenic content reached high above 10% values. InGa(As)Sb/AlGa(As)Sb quantum wells were
grown and their optical properties were characterised by photoluminescence and photoreflectance spectroscopy. Type-I quantum
wells showed a fundamental optical transition in the 1.9–2.1 μm range at room temperature. The epitaxial technology of the
structures was subjected to an optimisation procedure. The investigated layers and heterostructures can be considered for
application in laser devices. |
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