|
|||||
|
|
Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes |
|
| Authors: | Zhifeng Shi Xiaochuan Xia Hui Wang Xin Dong Baolin Zhang |
| Institution: | a State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, People's Republic of China b School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, People’s republic of China |
| Abstract: | ZnO-based heterojunction light emitting diodes (LEDs) with MgZnO barrier layer had been fabricated on the p-Si substrate by metal-organic chemical vapor deposition (MOCVD) technology. The current-voltage (I-V) characteristics exhibited a typical p-n diode behavior. Both ultraviolet (UV) and visible emissions could be detected in the electroluminescence (EL) measurement. The result was compared with the EL spectrum of n-ZnO/p-Si heterojunction LED without MgZnO barrier layer. An improved light extraction efficiency by about 31% was realized owing to the current-blocking effect of MgZnO layer. The result indicated that MgZnO barrier layer can prevent the electrons as expected and realize electron-hole recombination in ZnO layer effectively. |
| Keywords: | Metal-organic chemical vapor deposition MgZnO Electroluminescence |
| 本文献已被 ScienceDirect 等数据库收录！ | |