Electroluminescence from GaN-polymer heterojunction |
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Authors: | Basant Chitara Nidhi Lal C.N.R. Rao |
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Affiliation: | a Materials Research Centre, Indian Institute of Science, Bangalore 560012, India b International Centre for Materials Science and CSIR Centre for Excellence in Chemistry, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, P.O. Bangalore 560064, India |
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Abstract: | Inorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganic-organic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. I-V characteristics of the GaN-polymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 8-10 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44). |
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Keywords: | Electroluminescence GaN Inorganic-Organic heterojunction |
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