Room-temperature below bulk-Si band gap photoluminescence from P and B co-doped and compensated Si nanocrystals with narrow size distributions |
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Authors: | Masatoshi Fukuda Shinji Hayashi |
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Institution: | Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan |
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Abstract: | Thin films consisting of the layers of phosphorus (P) and boron (B) co-doped Si nanocrystals (Si-ncs) and glass spacer layers were prepared and their photoluminescence properties were studied. Cross-sectional TEM observations revealed the growth of Si-ncs with narrow size distributions. The samples exhibited PL below the band gap energy of bulk Si crystal at room temperature. The low-energy PL is considered to arise from the transitions between donor and acceptor states in compensated Si-ncs. The successful formation of narrow size distribution co-doped Si nanocrystals promotes the study of the optical properties of compensated Si nanocrystals. |
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Keywords: | Silicon nanocrystal Phosphorus Boron Co-doping Multi-layer Size distribution |
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