Simultaneous effects of hydrostatic pressure and applied electric field on the impurity-related self-polarization in GaAs/Ga1−xAlxAs multiple quantum wells |
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Authors: | RL Restrepo CA Duque ME Mora-Ramos |
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Institution: | a Física Teórica y Aplicada, Escuela de Ingeniería de Antioquia, A.A. 7516 Medellín, Colombia b Instituto de Física, Universidad de Antioquia, A.A. 1226 Medellín, Colombia c Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexico |
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Abstract: | A detailed theoretical study of the combined effects of hydrostatic pressure and in-growth direction applied electric field on the binding energy and self-polarization of a donor impurity in a system of GaAs-(Ga,Al)As coupled square quantum wells is presented. The study is performed in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electron effective mass, the dielectric constant, the barrier height, the well sizes, all them varying with the hydrostatic pressure are taken into account within the study. The results obtained show that the impurity binding energy and its self-polarization bear strong dependencies with the hydrostatic pressure, the strength of the applied electric field, the width of the confining potential barriers, and the impurity position. |
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Keywords: | Quantum well Donor impurity Self-polarization Electric field Hydrostatic pressure |
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