Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED |
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Authors: | Lung-Chien Chen Ching-Ho Tien Wei-Chian Liao Yi-Min Luo |
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Institution: | Department of Electro-optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, ROC |
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Abstract: | This work presents an aluminum nitride (AlN) nanocolumnar layer sputtered at various oblique angles and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm. The GaN-based LED structure is perpendicularly extended from the OA-AlN nanocolumnar layer. Then, the nanocolumnar structure is merged into p-GaN layer to form a mesa structure with a diameter of about 200-600 nm on the surface of the GaN-based LED. Moreover, optical characteristics of the LED were studied using photoluminescence, along with the blue-shifts observed as well. |
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Keywords: | Oblique-angle deposition AlN nanocolumnar layer GaN-based LED |
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