| C波段微波低相位噪声介质振荡源 |
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| 引用本文： | 吴礼群,夏牟,郑毅.C波段微波低相位噪声介质振荡源[J].固体电子学研究与进展,2006,26(1):60-63,68. |
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| 作者姓名： | 吴礼群 夏牟 郑毅 |
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| 作者单位： | 1. 南京电子器件研究所,南京,210016
2. 徐州空军学院,江苏,徐州,221000 |
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| 摘 要： | 介绍了微波低相位噪声介质振荡器的设计方法。就影响介质振荡器相位噪声的因素进行了讨论,从谐振回路有载Q值、有源器件、增益压缩量、电路模式等几个方面提出了降低相位噪声的方法,并给出了一个C波段微波低相噪振荡器的设计实例。测试结果表明:该振荡器工作频率3 900 MH z,输出功率大于10 dBm,相位噪声达到-102 dB c/H z@1 kH z;-128 dB c/H z@10 kH z。
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| 关 键 词： | 相位噪声 介质振荡器 微波 |
| 文章编号： | 1000-3819（2006）01-060-04 |
| 收稿时间： | 2005-11-04 |
| 修稿时间： | 2005-11-042005-12-08 |
C-band Microwave Low Phase Noise DRO |
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| WU Liqun,XIA Mu,ZHENG Yi.C-band Microwave Low Phase Noise DRO[J].Research & Progress of Solid State Electronics,2006,26(1):60-63,68. |
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| Authors: | WU Liqun XIA Mu ZHENG Yi |
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| Institution: | 1.Nanjing Electronic Devices Institute, Nanjing, 210016, CHN;2. Xuzhou Air Force Institute, Xuzhou, Jiangsu, 221000, CHN;3. Air Force, Nanjing, 210016, CHN |
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| Abstract: | A design method of the microwave low phase noise dielectric resonance oscillator(DRO) is presented in this paper.Factors that influence the phase noise of the DRO are discussed.Design methodology for phase noise improvements is described in detail from the aspects of the loaded Q of resonance circuit,active devices,gain compression and circuits models.And a design example of the microwave low phase noise DRO for C band application is given.Measured results show that the operating frequency is 3 900 MHz,output power of larger than 10 dBm and phase noise of-102 dBc/Hz@1 kHz,-128 dBc/Hz@10 kHz are achieved. |
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| Keywords: | phase noise dielectric resonance oscillator(DRO) microwave |
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