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The role of the etchant ion in the formation and growth of pores in silicon during its etching in hydrofluoric acid solutions |
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| Authors: | E N Abramova A M Khort V N Tsygankov A G Yakovenko V I Shvets |
| Abstract: | The role of the etchant ion (HF2)– in the formation of pores in silicon during its etching in hydrofluoric acid solutions has been elucidated. The pore shape, size, and orientation in (100) and (111) silicon substrates have been explained by specific features of the etchant ion (HF2)–. |
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