InP-based optoelectronic devices for optical fiber communications

In this contribution we report the research and development of 1.55 μm InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 μm and 1.55 μm InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7–10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 μm and 1.55 μm InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. Kunio Tada and Yoshiaki Nakano for their cooperation in the fabrication of the novel gain-coupled DFB lasers.