| MPNIM结构光致变电容效应 |
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| 引用本文： | 朱长纯,刘君华,J.M.Xu.MPNIM结构光致变电容效应[J].半导体学报,1989,10(6):419-425. |
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| 作者姓名： | 朱长纯 刘君华 J.M.Xu |
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| 作者单位： | 西安交通大学
(朱长纯，刘君华)，美国明尼苏达大学(J.M.Xu) |
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| 摘 要： | 本文报告了作者之一首先发现的MPNIM(金属-P型半导体-N型半月比-绝缘体-金属)结构的光致变电容效应。基于该效应已研制出新器件:半导体双向光控变容器.新器件的电容值与入射光强的关系,光谱响应特性,频率特性,C-V特性,温度特性已被研究.
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| 关 键 词： | 光致变电容 光敏元件 MPNIM 结构 |
Optical Activation Change Capacitance Effect of MPNIM Structure |
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| Zhu Changchun/Xi''''an Jiaotong University Liu Junhua/Xi''''an Jiaotong University J. M. Xu/University of Minnesota,U.S.A..Optical Activation Change Capacitance Effect of MPNIM Structure[J].Chinese Journal of Semiconductors,1989,10(6):419-425. |
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| Authors: | Zhu Changchun/Xi'an Jiaotong University Liu Junhua/Xi'an Jiaotong University J M Xu/University of Minnesota USA |
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| Abstract: | Optical activation change capacitance (OACC) effect of Metal-p/n Semiconductor-Isolator-Metal (MPNIM) structure discovered first by one of the authers has been reported in thispaper.Based on this effect,a bidirectional optical control varactor has been developed.Therelation of capacitance value of new devices to amplitude and wavelength variations of the in-cident optical radiation,the influence of temperature,C-V characteristics and influence ofmeasure frequency have been studied. |
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| Keywords: | Optical activation change capactance Optical sensors Multivalued devices Specific varactor |
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